frequency multiplier - passive - chip 1 HMC1105 v0 0.1013 gaas mmic x2 passive frequency multiplier, 20 - 40 ghz input general description features functional diagram passive: no dc bias required conversion loss: 12 dbm fo isolation: 41 db 3fo isolation: 46 db die size: 1.79 x 1.19 x 0.1 mm electrical specifcations, t a = +25c, input drive level = +15 dbm typical applications the HMC1105 is ideal for: ? microwave test equipment ? microwave/mmwave radios ? e-band radios ? military and space the HMC1105 is a passive miniature frequency doubler in a mmic die. suppression of undesired fundamental and higher order harmonics is up to 41 db typical with respect to input signal level. the doubler utilizes the same gaas schottky diode/ balun technology found in hittite mmic mixers. the HMC1105 features small size, requires no dc bias, and adds no measurable additive phase noise onto the multiplied signal. the HMC1105 is compatible with conventional die attach methods which make it ideal for mcm and hybrid microcircuit applications. all data shown herein is measured with the chip in a 50 ohm environment and contacted with rf probes. parameter min. t yp. max min. typ. max. units frequency range input 20 - 30 30 - 40 ghz frequency range output 40 - 60 60 - 80 ghz conversion loss 11 15 12 16 db input return loss 7 6 db output return loss 13 7 db fo isolation 41 41 db 3fo isolation 42 46 db for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se, no r for any infring emen ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an alog .com app li cation sup po rt: p ho ne: 1-800-analog-d
frequency multiplier - passive - chip 2 HMC1105 v0 0.1013 gaas mmic x2 passive frequency multiplier, 20 - 40 ghz input conversion loss vs. temperature @ +13 dbm drive level conversion loss vs. drive level isolation @ vs. drive level [1] input return loss output return loss -25 -20 -15 -10 -5 0 20 25 30 35 40 45 +25 c +85 c -55 c conversion gain (db) input frequency (ghz) -25 -20 -15 -10 -5 0 20 25 30 35 40 45 +9 dbm +11 dbm +13 dbm +15 dbm conversion gain (db) input frequency (ghz) -80 -70 -60 -50 -40 -30 -20 -10 0 20 30 40 50 60 70 80 90 100 110 1f0_11 dbm 1f0_13 dbm 1f0_15 dbm 3f0_11 dbm 3f0_13 dbm 3f0_15 dbm isolation (db) frequency (ghz) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 20 25 30 35 40 45 +25 c return loss (db) input frequency (ghz) -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 35 40 45 50 55 60 65 70 75 80 85 +25 c return loss (db) output frequency (ghz) [1] isolation measurement taken with respect to input level for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se, no r for any infring emen ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an alog .com app li cation sup po rt: p ho ne: 1-800-analog-d
frequency multiplier - passive - chip 3 HMC1105 v0 0.1013 gaas mmic x2 passive frequency multiplier, 20 - 40 ghz input outline drawing notes: 1. al l dimensions are in inches [mm]. 2. di e thickness is 0.004 3. bond pads 1, 2 & 3 are 0.0059 [0.150] x 0.0039 [0.099]. 4. ba ckside metallization: gold. 5. bo nd pad metallization: gold. 6. ba ckside metal is ground. 7. co nnection not required for unlabeled bond pads. 8. ov er all d ie s ize 0 .002 electrostatic sensiti v e de v ice o bser v e ha ndling precautions standard alternate gp-2 (gel pack) [2] [1] for more information refer to the packaging information document in the product support section of our website. [2] for alternate packaging information contact hittite microwave corporation. rf power input +17 dbm channel temperature 175 c thermal resistance (r th ) (junction to die bottom) 555.6 c/w operating temperature -55 to +85 c storage temperature -65 to 150 c esd sensitivity (hbm) class 1a, passed 250 v absolute maximum ratings die packaging information [1] for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se, no r for any infring emen ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an alog .com app li cation sup po rt: p ho ne: 1-800-analog-d
frequency multiplier - passive - chip 4 HMC1105 v0 0.1013 gaas mmic x2 passive frequency multiplier, 20 - 40 ghz input pad descriptions pad number function description pad schematic 1 rfin this pad is ac coupled and matched to 50 ohms. 2 rfout this pad is ac coupled and matched to 50 ohms. die bottom gnd die bottom must be connected to rf/dc ground assembly diagram for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se, no r for any infring emen ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an alog .com app li cation sup po rt: p ho ne: 1-800-analog-d
frequency multiplier - passive - chip 5 HMC1105 v0 0.1013 gaas mmic x2 passive frequency multiplier, 20 - 40 ghz input mounting & bonding techniques for millimeterwave gaas mmics the die should be attached directly to the ground plane eutectically or with conductive epoxy (see hmc general handling, mounting, bonding note). 50 ohm microstrip transmission lines on 0.127mm (5 mil) thick alumina thin flm substrates are recommended for bringing rf to and from the chip (figure 1). one way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly- tab) which is then attached to the ground plane (figure 2). microstrip substrates should be located as close to the die as possible in order to minimize bond wire length. typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). handling precautions follow these precautions to avoid permanent damage. storage: all bare die are placed in either waffle or gel based esd protec - tive containers, and then sealed in an esd protective bag for shipment. once the sealed esd protective bag has been opened, all die should be stored in a dry nitrogen environment. cleanliness: handle the chips in a clean environment. do not attempt to clean the chip using liquid cleaning systems. static sensitivity: follow esd precautions to protect against > 250v esd strikes. transients: suppress instrument and bias supply transients while bias is applied. use shielded signal and bias cables to minimize inductive pick- up. general handling: handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. the surface of the chip may have fragile air bridges and should not be touched with vacuum collet, tweezers, or fngers. mounting the chip is back-metallized and can be die mounted with ausn eutectic preforms or with electrically conductive epoxy. the mounting surface should be clean and fat. eutectic die attach: a 80/20 gold tin preform is recommended with a work surface temperature of 255 c and a tool temperature of 265 c. when hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 c. do not expose the chip to a temperature greater than 320 c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fllet is observed around the perimeter of the chip once it is placed into position. cure epoxy per the manufacturers schedule. wire bonding ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. thermosonic wirebonding with a nominal stage temperature of 150 c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recom - mended. use the minimum level of ultrasonic energy to achieve reliable wirebonds. wirebonds should be started on the chip and terminated on the package or substrate. all bonds should be as short as possible <0.31mm (12 mils). 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.127mm (0.005?) thick alumina thin film substrate 0.076mm (0.003?) figure 1. 0.102mm (0.004?) thick gaas mmic wire bond rf ground plane 0.254mm (0.010?) thick alumina thin film substrate 0.076mm (0.003?) figure 2. 0.150mm (0.005?) thick moly tab for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se, no r for any infring emen ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an alog .com app li cation sup po rt: p ho ne: 1-800-analog-d
frequency multiplier - passive - chip 6 HMC1105 v0 0.1013 gaas mmic x2 passive frequency multiplier, 20 - 40 ghz input notes: for price, delivery and to place orders: hittite microwave corporation, 2 elizabeth drive, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com information furn is hed by an al og devices is believed to be a cc urate and re lia bl e. however, no responsibility is assumed by an al og devices for its u se, no r for any infring emen ts of pat en ts or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent rights of analog devices. trademarks and registered trademarks are the property of their respective owners. for price, delivery, and to place o rd ers: an al og devices, inc., one techn ol ogy way, p.o. box 9106, norwood, ma 02062-9106 phone: 781-329-4700 o rd er online at ww w.an alog .com app li cation sup po rt: p ho ne: 1-800-analog-d
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